 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2N3055, MJ2955 Preferred Device Complementary Silicon Power Transistors . . . designed for general-purpose switching and amplifier applications. * DC Current Gain - hFE = 20 -70 @ IC = 4 Adc * Collector-Emitter Saturation Voltage - * * VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area Pb-Free Package is Available Rating Symbol VCEO VCER VCB VEB IC IB Value 60 70 Unit Vdc Vdc Vdc Vdc Adc Adc http://onsemi.com MAXIMUM RATINGS Collector-Emitter Voltage 15 A POWER TRANSISTORS COMPLEMENTARY SILICON 60 V 115 W MARKING DIAGRAM PD, POWER DISSIPATION (WATTS) II I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII II I I I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I II I II IIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII I II II I I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II II I I I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II I II II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II II I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII II Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 100 7 Collector Current - Continuous Base Current 15 7 Total Power Dissipation @ TC = 25C Derate above 25C PD 115 0.657 W W/C C Operating and Storage Junction Temperature Range TJ, Tstg - 65 to + 200 TO-204AA (TO-3) CASE 1-07 xxxx55 A YYWW THERMAL CHARACTERISTICS Characteristic Symbol RqJC Max Unit xxxx55 = Device Code xxxx= 2N3055 or MJ2955 A = Assembly Location YY = Year WW = Work Week x = 1, 2, or 3 Thermal Resistance, Junction-to-Case 1.52 C/W Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 160 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 175 200 ORDERING INFORMATION Device 2N3055 2N3055G Package TO-204AA TO-204AA (Pb-Free) TO-204AA TO-204AA Shipping 100 Units / Tray 1 Units / Tubes 2N3055H MJ2955 100 Units / Tray 100 Units / Tray For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. TC, CASE TEMPERATURE (C) Preferred devices are recommended choices for future use and best overall value. Figure 1. Power Derating (c) Semiconductor Components Industries, LLC, 2004 1 April, 2004 - Rev. 4 Publication Order Number: 2N3055/D 2N3055, MJ2955 IC, COLLECTOR CURRENT (AMP) I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I I II I I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII Characteristic Symbol Min Max Unit *OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, IB = 0) VCEO(sus) VCER(sus) ICEO ICEX 60 70 - - - 0.7 Vdc Vdc mAdc mAdc Collector-Emitter Sustaining Voltage (Note 1) (IC = 200 mAdc, RBE = 100 W) Collector Cutoff Current (VCE = 30 Vdc, IB = 0) Collector Cutoff Current (VCE = 100 Vdc, VBE(off) = 1.5 Vdc) (VCE = 100 Vdc, VBE(off) = 1.5 Vdc, TC = 150C) Emitter Cutoff Current (VBE = 7.0 Vdc, IC = 0) - - - 1.0 5.0 5.0 IEBO mAdc *ON CHARACTERISTICS (Note 1) DC Current Gain (IC = 4.0 Adc, VCE = 4.0 Vdc) (IC = 10 Adc, VCE = 4.0 Vdc) hFE - 20 5.0 70 - Collector-Emitter Saturation Voltage (IC = 4.0 Adc, IB = 400 mAdc) (IC = 10 Adc, IB = 3.3 Adc) Base-Emitter On Voltage (IC = 4.0 Adc, VCE = 4.0 Vdc) SECOND BREAKDOWN VCE(sat) - VBE(on) - 1.1 3.0 1.5 Vdc Vdc Second Breakdown Collector Current with Base Forward Biased (VCE = 40 Vdc, t = 1.0 s, Nonrepetitive) Is/b 2.87 - Adc DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) *Small-Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz) fT 2.5 15 10 - MHz - hfe 120 - *Small-Signal Current Gain Cutoff Frequency (VCE = 4.0 Vdc, IC = 1.0 Adc, f = 1.0 kHz) fhfe kHz *Indicates Within JEDEC Registration. (2N3055) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 20 50 ms 10 6 4 2 1 0.6 0.4 0.2 6 BONDING WIRE LIMIT THERMALLY LIMITED @ TC = 25C (SINGLE PULSE) SECOND BREAKDOWN LIMIT 10 20 40 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 60 500 ms 250 ms dc 1 ms ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated for temperature according to Figure 1. Figure 2. Active Region Safe Operating Area http://onsemi.com 2 2N3055, MJ2955 500 300 200 hFE , DC CURRENT GAIN 100 70 50 30 20 10 7.0 5.0 TJ = 150C 25C -55 C VCE = 4.0 V hFE , DC CURRENT GAIN 100 70 50 30 20 25C -55 C TJ = 150C 200 VCE = 4.0 V 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 IC, COLLECTOR CURRENT (AMP) 10 10 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMP) 5.0 7.0 10 Figure 3. DC Current Gain, 2N3055 (NPN) Figure 4. DC Current Gain, MJ2955 (PNP) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25C 1.6 IC = 1.0 A 1.2 4.0 A 8.0 A VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2.0 TJ = 25C 1.6 IC = 1.0 A 4.0 A 8.0 A 1.2 0.8 0.8 0.4 0 5.0 0.4 0 5.0 10 20 50 100 200 500 1000 2000 IB, BASE CURRENT (mA) 5000 10 20 50 100 200 500 1000 2000 IB, BASE CURRENT (mA) 5000 Figure 5. Collector Saturation Region, 2N3055 (NPN) 1.4 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 0.6 0.4 0.2 0 0.1 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 0 0.1 VBE(sat) @ IC/IB = 10 VBE @ VCE = 4.0 V TJ = 25C 1.6 V, VOLTAGE (VOLTS) 2.0 Figure 6. Collector Saturation Region, MJ2955 (PNP) TJ = 25C 1.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 4.0 V 0.8 0.4 VCE(sat) @ IC/IB = 10 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 IC, COLLECTOR CURRENT (AMPERES) IC, COLLECTOR CURRENT (AMP) Figure 7. "On" Voltages, 2N3055 (NPN) Figure 8. "On" Voltages, MJ2955 (PNP) http://onsemi.com 3 2N3055, MJ2955 PACKAGE DIMENSIONS TO-204 (TO-3) CASE 1-07 ISSUE Z A N C -T- E D 2 PL SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77 K M 0.13 (0.005) U V 2 TQ M Y M L G 1 -Y- H B -Q- 0.13 (0.005) M TY M ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 4 2N3055/D |
Price & Availability of MJ2955
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |